A 0.8-V 110-nA CMOS current reference circuit using subthreshold operation

نویسندگان

  • Igors Homjakovs
  • Tetsuya Hirose
  • Yuji Osaki
  • Masanori Hashimoto
  • Takao Onoye
چکیده

This paper proposes a low voltage CMOS nano-ampere current reference circuit and presents its performance with circuit simulations in 180-nm technology. The proposed circuit consists of biasvoltage, current-source and offset-voltage sub-circuits with most of MOSFETs operating in subthreshold region. Simulation results show that the circuit generates a stable reference current of 110-nA in supply voltage range of 0.8–1.8-V with line sensitivity of 9250 ppm/V. The proposed circuit is useful for composing a voltage reference circuit for ultra-low power applications.

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عنوان ژورنال:
  • IEICE Electronic Express

دوره 10  شماره 

صفحات  -

تاریخ انتشار 2013